Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs

Author

Montes, Enrique J. ; Reed, Robert A. ; Pellish, Jonathan A. ; Alles, Michael L. ; Schrimpf, Ronald D. ; Weller, Robert A. ; Varadharajaperumal, Muthubalan ; Niu, Guofu ; Sutton, Akil K. ; Diestelhorst, Ryan ; Espinel, Gustavo ; Krithivasan, Ramkumar ; Com

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN

Volume

55

Issue

3

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

1581

Lastpage

1586

Abstract

Microbeam measurements and TCAD simulations are used to examine the effects of ion angle of incidence on the charge collected from events occurring in a Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT). The results identify the geometrically driven charge-collection mechanisms that dominate the low LET broad beam SEU response. The deep trench isolation that surrounds the transistor significantly modulates the charge transport and, therefore, the charge collected by the collector. A new way of estimating critical charge, , for upset in SiGe HBT circuits is proposed based on TCAD simulation results and measured broadbeam data.

Keywords

heterojunction bipolar transistors; ion beam effects; SiGe HBT; TCAD simulations; deep trench isolation; geometrically driven charge-collection mechanisms; low-energy-deposition events; microbeam measurements; silicon germanium heterojunction bipolar transistor; single event upset mechanisms; Charge measurement; Circuits; Current measurement; Diffusion tensor imaging; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; NASA; Silicon germanium; Single event upset; Deep trench isolation (DTI); HBT; IBICC; TCAD; silicon germanium (SiGe); single event upset (SEU);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.893920

Filename

4545168