The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source

Author

Huang, C.T. ; Lei, T.F. ; Chu, C.H. ; Shvu, S.H.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

17

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

88

Lastpage

90

Abstract

The electrical characteristics of ultra-shallow p/sup +//n junctions formed by implanting a 60 keV Ge/sup +/ into a TiSi/sub 2/ layer have been studied. A very low reverse leakage current density (/spl cong/0.4 nA/cm/sup 2/ at -5 V) and a very good forward ideality factor n (/spl cong/1.001) were achieved in these ultra-shallow p/sup +//n junctions. From the secondary ion mass spectrometry (SIMS) analysis, the junction depth was measured to be 600 /spl Aring/ and the surface concentration was about 3 times higher than that of the conventional samples.

Keywords

diffusion; germanium; ion implantation; p-n junctions; secondary ion mass spectra; 60 keV; Ge-implantation; Si:Ge; TiSi/sub 2/; electrical characteristics; forward ideality factor; reverse leakage current density; secondary ion mass spectrometry; silicide diffusion source; ultra-shallow p/sup +//n junction; Boron; Conductivity; Electric variables; Germanium; Implants; Leakage current; Mass spectroscopy; Silicidation; Silicides; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485176

Filename

485176