Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films

Author

Chang, Chun-Yen ; Lin, Hsiao-Yi ; Lei, Tan Fu ; Cheng, Juing-Yi ; Chen, Liang-Po ; Dai, Bau-Tong

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

17

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

100

Lastpage

102

Abstract

A top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP). In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm/sup 2//V-s, ON/OFF current ratio of 1.1 10/sup 7/, and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT´s.

Keywords

chemical vapour deposition; elemental semiconductors; polishing; semiconductor technology; silicon; thin film transistors; Si; chemical mechanical polishing; fabrication; field effect mobility; on/off current ratio; polycrystalline silicon film; thin film transistor; threshold voltage; ultrahigh vacuum chemical vapor deposition; Active matrix liquid crystal displays; Chemical vapor deposition; Fabrication; Rough surfaces; Semiconductor films; Semiconductor thin films; Silicon; Surface roughness; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485180

Filename

485180