A high-current and high-temperature 6H-SiC thyristor

Author

Xie, K. ; Zhao, J.H. ; Flemish, J.R. ; Burke, T. ; Buchwald, W.R. ; Lorenzo, G. ; Singh, H.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

17

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

142

Lastpage

144

Abstract

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm/sup 2/ have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300/spl deg/C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities.

Keywords

contact resistance; current density; silicon compounds; thyristors; wide band gap semiconductors; 100 V; 100 ns; 20 to 300 C; 43 ns; 6H-SiC thyristor; SiC; anode ohmic contact resistance; device forward drop; forward breakover voltage; high current densities; high-current thyristor; high-temperature operation; pulse gate triggering; pulse switched current density; Anodes; Current density; Etching; FETs; Laboratories; Silicon carbide; Temperature; Thermal conductivity; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485194

Filename

485194