An accurate semi-empirical saturation drain current model for LDD n-MOSFET

Author

Chen, Kai ; Wann, H.C. ; Duster, Jon ; Pramanik, Dipankar ; Nariani, Subhash ; Ko, Ping K. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

17

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

145

Lastpage

147

Abstract

Based on a new empirical mobility model which is solely dependent on V/sub gs/, V/sub t/ and T/sub ox/, a corresponding semiempirical I/sub dsat/ model for n-MOSFET including velocity saturation, mobility degradation due to increased vertical effective field, and source/drain series resistance of LDD structures is reported in this paper. A good agreement among the model and the measurement data from several different technologies is shown. Prediction of I/sub dsat/ for the future generations of device scaling and low-power applications by using this new model is presented.

Keywords

MOSFET; carrier mobility; electric current; semiconductor device models; LDD NMOSFET; LDD structures; device scaling; lightly doped drain; low-power applications; mobility degradation; mobility model; n-channel MOSFET; saturation drain current model; semiempirical model; source/drain series resistance; velocity saturation; vertical effective field; Degradation; Electrical resistance measurement; Electron mobility; MOS devices; MOSFET circuits; Predictive models; Scattering; Temperature; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485195

Filename

485195