• DocumentCode
    758257
  • Title

    Potential Drops in Metal-Dielectric-Semiconductor Capacitors

  • Author

    Jordan, Angel G.

  • Volume
    8
  • Issue
    4
  • fYear
    1965
  • Firstpage
    131
  • Lastpage
    136
  • Abstract
    During the past few years many of the recent developments in the semiconductor devices field have found their way to the classroom through the collaboration of a handful of well-written books and tutorial papers. However, the electrical engineering student at junior and senior level is usually confused when exposed to subjects where voltage drops in semiconductor structures are involved. Two years ago, the author and collaborators wrote a note concerning potentials in semiconductor structures with added carriers. The approach and language used in that tutorial presentation aroused interest among colleagues in the teaching profession. The same approach and language are used in this paper to discuss potential drops in Metal-Dielectric-Semiconductor capacitors. These devices have excited considerable interest recently and may well be incorporated as subject material in an undergraduate curriculum in electrical engineering.
  • Keywords
    Capacitance; Capacitors; Collaboration; Dielectrics; Education; Electrical engineering; Electrostatics; Semiconductor devices; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Education, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9359
  • Type

    jour

  • DOI
    10.1109/TE.1965.4321916
  • Filename
    4321916