• DocumentCode
    758408
  • Title

    Site Solution Preference of \\hbox {Bi}^{3+} in \\hbox {RE}_{2}\\hbox {O}_{3} Scintillators

  • Author

    Stanek, Christopher R. ; McClellan, Kenneth J. ; Levy, Mark R. ; Grimes, Robin W.

  • Author_Institution
    Mater. Sci. & Technol. Div., Los Alamos Nat. Lab., Los Alamos, NM
  • Volume
    55
  • Issue
    3
  • fYear
    2008
  • fDate
    6/1/2008 12:00:00 AM
  • Firstpage
    1492
  • Lastpage
    1495
  • Abstract
    Atomic-scale simulations have been employed to predict the site solution preference of Bi3+ activator cations in a series of RE2O3 scintillators with the bixbyite crystal structure (Ialpha3), where RE denotes a 3+ cation ranging in size from Sc3+ to La3+ . There are two crystallographically unique cation sites in the bixbyite structure, in Wyckoff notation referred to as the 24d and 8b site. It is expected that the spectroscopic properties of an activator cation residing on the 24d site will be different from the same activator cation residing on the 8b site, due to the distinct symmetries (C2 and S6 respectively) of these two sites. Previous studies have revealed two different Bi3+ emissions in Y2O3 corresponding to Bi3+ cations occupying both lattice 24d and 8b sites. By predicting the energy difference of the Bi3+ solution on the 24d and 8b sites, we are able to predict the distribution of Bi3+ in a range of bixbyite compounds.
  • Keywords
    bismuth; crystal structure; doping profiles; luminescence; rare earth compounds; scintillation; Bi3+ cations; Jk2O3:Bi; Wyckoff notation; activator cation doping level; atomic-scale simulations; bixbyite crystal structure; luminescence; rare earth oxides scintillators; solution preference; Bismuth; Ceramics; Crystalline materials; Crystallography; Lattices; Luminescence; Optical materials; Predictive models; Spectroscopy; Temperature distribution; Atomistic simulation; defect chemistry; rare earth compounds; scintillators;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.910864
  • Filename
    4545215