DocumentCode
758456
Title
Thermal stability of deuterium in InAlN and InAlGaN
Author
Pearton, S.J. ; Abernathy, C.R. ; MacKenzie, J.D. ; Wilson, R.G. ; Ren, F. ; Zavada, J.M.
Author_Institution
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
Volume
31
Issue
4
fYear
1995
fDate
2/16/1995 12:00:00 AM
Firstpage
327
Lastpage
329
Abstract
Deuterium concentrations of ⩾1021 cm-3 can be introduced into epitaxial InAlN and InAlGaN by plasma exposure at 250°C. This produces a decrease of approximately a factor of 10 in the n-type carrier concentration in these materials, but can be reversed by annealing at ~500°C. Reactivation occurs with an apparent activation energy of ~2.4 eV. Annealing at 900°C is required to remove >90% of the deuterium from both nitride materials
Keywords
III-V semiconductors; aluminium compounds; annealing; carrier density; deuterium; gallium compounds; impurities; indium compounds; semiconductor epitaxial layers; 250 degC; 500 degC; 900 degC; D thermal stability; InAlGaN:D; InAlN:D; activation energy; annealing; n-type carrier concentration; nitride materials; plasma exposure; reactivation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950194
Filename
375826
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