• DocumentCode
    758494
  • Title

    Enhancement of potential barrier height by superlattice barriers in the InGaAsP/InP materials system

  • Author

    Chelakara, R.V. ; Islam, M.R. ; Dupuis, R.D.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • Volume
    31
  • Issue
    4
  • fYear
    1995
  • fDate
    2/16/1995 12:00:00 AM
  • Firstpage
    321
  • Lastpage
    323
  • Abstract
    The authors have calculated the election wave reflectivities for a variety of superlattice barriers in the InAlAs/InGaAsP/InP materials system. For an optimised superlattice barrier, we have calculated an effective barrier height of more than five times the classical barrier height available in this system. The significant improvement in the potential barrier height implies that the overflow leakage of hot electrons from the active layer to the cladding layer generated by the Auger effect can be suppressed, thereby improving the threshold current and the temperature characteristics of lasers in this system
  • Keywords
    Auger effect; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; hot carriers; indium compounds; reflectivity; semiconductor superlattices; tunnelling; Auger effect; InAlAs-InGaAsP-InP; active layer; cladding layer; election wave reflectivities; hot electrons; lasers; overflow leakage; potential barrier height enhancement; superlattice barriers; temperature characteristics; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950200
  • Filename
    375830