• DocumentCode
    758512
  • Title

    Direct determination of source, drain and channel resistances of HEMTs

  • Author

    Zhu, Y. ; Ishimaru, Yasuo ; Shimizu, M.

  • Author_Institution
    Central Res. Labs., Sharp Corp., Nara, Japan
  • Volume
    31
  • Issue
    4
  • fYear
    1995
  • fDate
    2/16/1995 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    320
  • Abstract
    A novel model describing the distribution of channel current in HEMTs is proposed, yielding a simple way to determine the source, drain and channel resistances of the device. The resistances can be deduced directly from measurement of the device I/V characteristics in three different configurations
  • Keywords
    electric resistance; equivalent circuits; high electron mobility transistors; semiconductor device models; HEMTs; channel current distribution; channel resistance; device I/V characteristics; drain resistance; source resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950198
  • Filename
    375832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=758512