DocumentCode
758519
Title
Anisotropic etching of WSi films on GaAs
Author
Shul, R.J. ; Baca, A.G. ; Rieger, D.J. ; Howard, A.J.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
31
Issue
4
fYear
1995
fDate
2/16/1995 12:00:00 AM
Firstpage
317
Lastpage
318
Abstract
Anisotropic etching of tungsten silicide submicrometre features has been achieved with both electron cyclotron resonance (ECR) and reactive ion etch (RIE) systems using fluorine based plasmas. The processes are suitable for WSi Schottky gates for high-speed, high-power GaAs transistors. WSi gate sidewall profiles, etch rates, and selectivity to photoresist are evaluated as a function of DC bias
Keywords
Schottky gate field effect transistors; gallium arsenide; metallic thin films; semiconductor device metallisation; sputter etching; tungsten compounds; DC bias; ECR systems; MESFET fabrication; RIE systems; Schottky gates; WSi; WSi films; WSi-GaAs; anisotropic etching; electron cyclotron resonance; etch rates; fluorine based plasmas; high-power GaAs transistors; high-speed GaAs transistors; photoresist; reactive ion etch; selectivity; sidewall profiles; submicrometre features;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950213
Filename
375833
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