High quality Al/sub 2/O/sub 3/ IPD with NH/sub 3/ surface nitridation

Author

Chen, Yeong Yuh ; Chien, Chao Hsin ; Lou, Jen Chung

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

24

Issue

8

fYear

2003

Firstpage

503

Lastpage

505

Abstract

In this letter, the effect of surface NH/sub 3/ nitridation on the electrical properties and reliability characteristics of aluminum oxide (Al/sub 2/O/sub 3/) interpoly capacitors is studied. With NH/sub 3/ surface nitridation, the formation of an additional layer with lower dielectric constant during post-annealing process can be significantly suppressed, compared to that without nitridation treatment. Furthermore, the presence of a thin Si-N layer can make post-deposition annealing more effective in eliminating traps existing in the as-deposited films. As a result, a smoother interface and smaller electron trapping rate can contribute to the drastically reduced leakage current, enhanced breakdown field and charge to breakdown (Q/sub bd/) of Al/sub 2/O/sub 3/ interpoly capacitors with surface NH/sub 3/ nitridation.

Keywords

aluminium compounds; capacitors; dielectric thin films; electron traps; integrated circuit reliability; leakage currents; nitridation; permittivity; Al/sub 2/O/sub 3/; IPD; breakdown field; charge to breakdown; dielectric constant; electron trapping rate; interpoly capacitors; leakage current; post-annealing process; reliability characteristics; surface nitridation; Aluminum oxide; Capacitors; Dielectrics; Electric breakdown; Electron traps; Flash memory; Leakage current; Nonvolatile memory; Surface treatment; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.815152

Filename

1218655