Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

Author

Chuang, Hung-Ming ; Cheng, Shiou-Ying ; Chen, Chun-Yuan ; Liao, Xin-Da ; Liu, Rong-Chau ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

50

Issue

8

fYear

2003

Firstpage

1717

Lastpage

1723

Abstract

An interesting new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET) is fabricated and demonstrated. Due to the employed InGaAs double doped channel (DDC) structure and Schottky behaviors of InGaP "insulator," good dc properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional (2-D) simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over a wide operating temperature region (300\n\n\t\t

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; junction gate field effect transistors; 300 to 450 K; DC characteristics; InGaP-InGaAs; InGaP-InGaAs PDDCHFET; RF characteristics; high-temperature microwave electronics; leakage current; linearity; pseudomorphic double doped channel heterostructure field effect transistor; temperature dependence; turn-on voltage; two-dimensional simulation; HEMTs; Indium gallium arsenide; Insulation; Leakage current; Linearity; MODFETs; Radio frequency; Temperature; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.815145

Filename

1218662