Title :
GaN MESFETs for high-power and high-temperature microwave applications
Author :
Shin, M.W. ; Trew, R.J.
Author_Institution :
Dept. of Inorg. Mater. Eng., Myong Ji Univ., Kyunggi, South Korea
fDate :
3/16/1995 12:00:00 AM
Abstract :
The potential of microwave GaN MESFETs is evaluated using a harmonic-balance RF simulator for high-power and high-temperature applications. The simulated device performance (DC I/V characteristics and small-signal power gain) of a GaN FET is in good agreement with experimental data. It is demonstrated that the excellent electrical properties of GaN make it a viable alternative to SiC for microwave high-power and high-temperature applications
Keywords :
III-V semiconductors; digital simulation; gallium compounds; microwave field effect transistors; microwave power transistors; power MESFET; DC I/V characteristics; GaN; MESFETs; electrical properties; harmonic-balance RF simulator; high-power device; high-temperature operation; microwave applications; small-signal power gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950320
