Interband-resonant light modulation by intersubband-resonant light in undoped quantum wells

Author

Noda, Susumu ; Ohya, Masaki ; Sakamoto, Takeshi ; Sasaki, Akio

Author_Institution

Dept. of Electr. Eng., Kyoto Univ., Japan

Volume

32

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

448

Lastpage

455

Abstract

Interband-resonant light modulation by intersubband-resonant light in undoped quantum wells is investigated. Theoretical calculation for the modulation is carried out by considering not only the excitonic interband-transition but also the continuous level transition between the conduction and valence bands. The modulation characteristics are compared with those of the modulation using n-doped quantum wells. The possibility of the modulation using undoped quantum well is successfully shown by real-time single-shot experiment using Ti-Al₂O₃ and CO₂ lasers for interband- and intersubband-resonant lights at room temperature

Keywords

III-V semiconductors; aluminium compounds; conduction bands; excitons; gallium arsenide; optical modulation; photoluminescence; semiconductor quantum wells; valence bands; 298 K; Al₂O₃:Ti; AlGaAs-GaAs; CO₂; CO₂ lasers; Ti-Al₂O₃ laser; conduction bands; continuous level transition; excitonic interband-transition; interband-resonant light modulation; intersubband-resonant light; modulation characteristics; n-doped quantum wells; real-time single-shot experiment; room temperature; undoped quantum wells; valence bands; Absorption; Energy states; Fiber nonlinear optics; Laser transitions; Nonlinear optics; Optical modulation; Quantum well lasers; Resonance; Semiconductor lasers; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.485396

Filename

485396