Title :
1.58-μm broad-band erbium-doped tellurite fiber amplifier
Author :
Mori, Atsushi ; Sakamoto, Tadashi ; Kobayashi, Kenji ; Shikano, Koji ; Oikawa, Kiyoshi ; Hoshino, Koichi ; Kanamori, Terutoshi ; Ohishi, Yasutake ; Shimizu, Makoto
Author_Institution :
Photonics Labs., Nippon Telegraph & Telephone Corp., Kanagawa, Japan
fDate :
5/1/2002 12:00:00 AM
Abstract :
This paper describes the development of a 1.58-μm broad-band and gain-flattened erbium-doped tellurite fiber amplifier (EDTFA). First, we compare the spectroscopic properties of various glasses including the stimulated emission cross sections of the Er3+4 I132/ 4I152/ transition and the signal excited-state absorption (ESA) cross sections of the Er3+4 I132/ - 4I92/ transition. We detail the amplification characteristics of a 1.58-μm-band EDTFA designed for wavelength-division-multiplexing applications by comparing it with a 1.58-μm-band erbium-doped silica fiber amplifier. Furthermore, we describe the 1.58-μm-band gain-flattened EDTFA we developed using a fiber-Bragg-grating-type gain equalizer. We achieved a gain of 25.3 dB and a noise figure of less than 6 dB with a slight gain excursion of 0.6 dB over a wide wavelength range of 1561-1611 nm. The total output power of the EDTFA module was 20.4 dBm and its power conversion efficiency reached 32.8%.
Keywords :
erbium; optical fibre amplifiers; optical transmitters; stimulated emission; 1.58 micron; 1561 to 1611 nm; 25.3 dB; Judd-Ofelt analysis; broadband gain-flattened fiber amplifier; erbium-doped tellurite fiber amplifier; excited-state absorption cross sections; fiber-Bragg-grating-type gain equalizer; gain excursion; operational wavelength dependence; power conversion efficiency; spectroscopic properties; stimulated emission cross sections; total output power; wavelength-division-multiplexing; Absorption; Equalizers; Erbium; Erbium-doped fiber amplifier; Gain; Glass; Noise figure; Silicon compounds; Spectroscopy; Stimulated emission;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2002.1007935