DocumentCode :
759638
Title :
Novel photoresist stripping technology using ozone/vaporized water mixture
Author :
Abe, Hitoshi ; Iwamoto, Hayato ; Toshima, Takayuki ; Iino, Tadashi ; Gale, Glenn W.
Author_Institution :
Sony Corp., Kanagawa, Japan
Volume :
16
Issue :
3
fYear :
2003
Firstpage :
401
Lastpage :
408
Abstract :
The authors have developed a new process as an alternative to sulfuric peroxide mixture (SPM) cleaning of Si wafers. This process, vapor ozone strip (VOS), uses ozone and vaporized water, significantly reducing any effect on environment, health and safety. The process is more effective than ozone water immersion, because high concentration ozone gas and high temperature water can be used simultaneously. Also, the process uses the highly reactive OH* radical species. The VOS process is able to strip photoresist at a higher rate than other techniques using ozone. Ion implanted photoresist and etched photoresist can be stripped. VOS has demonstrated equivalent performance to SPM in electrical reliability testing.
Keywords :
integrated circuit manufacture; integrated circuit technology; ozone; photoresists; silicon; surface cleaning; water; H2O; O3; Si; Si wafers; etched photoresist; high concentration ozone gas; high temperature water; highly reactive OH* radical species; ion implanted photoresist; ozone/vaporized water mixture; photoresist stripping technology; vapor ozone strip; wafer cleaning; Chemistry; Cleaning; Electrons; Health and safety; Resists; Scanning probe microscopy; Strips; Temperature; Water heating; Water pollution;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2003.815620
Filename :
1219486
Link To Document :
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