• DocumentCode
    759658
  • Title

    A physically-based C∞-continuous fully-depleted SOI MOSFET model for analog applications

  • Author

    Iníguez, Benjamín ; Ferreira, L.F. ; Gentinne, Bernard ; Flandre, Denis

  • Author_Institution
    Dept. of Phys., Balearic Islands Univ., Palma de Mallorca, Spain
  • Volume
    43
  • Issue
    4
  • fYear
    1996
  • fDate
    4/1/1996 12:00:00 AM
  • Firstpage
    568
  • Lastpage
    575
  • Abstract
    An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented. Under quasistatic operation conditions analytical and C∞-continuous equations are derived for all transistor large and small-signal parameters. Short-channel effects have been included. The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; C∞-continuous equations; SOI MOSFET; analog applications; large-signal parameters; physically-based fully-depleted model; quasistatic operation conditions; short-channel effects; small-signal parameters; Analog circuits; CMOS technology; Capacitance; Circuit simulation; Equations; Frequency; Helium; MOSFET circuits; Power MOSFET; Switching circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.485539
  • Filename
    485539
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=759658