• DocumentCode
    759661
  • Title

    Reliable InGaAs quantum well lasers at 1.1 mu m

  • Author

    Waters, R.G. ; York, P.K. ; Beernink, K.J. ; Coleman, J.J.

  • Volume
    27
  • Issue
    7
  • fYear
    1991
  • fDate
    3/28/1991 12:00:00 AM
  • Firstpage
    552
  • Lastpage
    554
  • Abstract
    Strained-layer InGaAs quantum well lasers operating CW at 1.1 mu m have been life tested to over 18000 h, exhibiting a degradation rate of <.8% per kh. These uncoated lasers were life tested at 70 mW (per facet) in constant-power mode at a heatsink temperature of 30 degrees C. The laser structure, grown by metalorganic chemical vapour deposition, incorporates a step-graded quantum well heterostructure with a 30 AA In0.45Ga0.55As quantum well.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; life testing; semiconductor junction lasers; semiconductor quantum wells; 1.1 micron; 18000 h; 20 A; 30 C; 70 mW; CW operation; In 0.45Ga 0.55As quantum well; InGaAs quantum well lasers; constant-power mode; degradation rate; heatsink temperature; laser structure; life tested; metalorganic chemical vapour deposition; semiconductors; step-graded quantum well heterostructure; strained layer lasers; uncoated lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910348
  • Filename
    100830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=759661