Multiple-quantum-well reflection modulator using a lifted-off GaAs/AlGaAs film bonded to gold on silicon

Author

Yoffe, G.W. ; Dell, J.M.

Author_Institution

Telecom Australia Res. Labs., Clayton, Vic., Australia

Volume

27

Issue

7

fYear

1991

fDate

3/28/1991 12:00:00 AM

Firstpage

557

Lastpage

558

Abstract

A normally-off asymmetry Fabry-Perot reflection modulator using a lifted-off GaAs/AlGaAs multiple-quantum well-structure is reported. The 2 mu m thick epitaxial layer was bonded to a silicon wafer coated with gold, which served as the rear mirror and as an electrical contact. Modulation ratios of 3.4:1 with 5 V bias and 4.3:1 with 12 V bias were obtained with an insertion loss of 4.3 dB at 12 V.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; gold; integrated circuit technology; integrated optoelectronics; optical interconnections; optical modulation; semiconductor epitaxial layers; semiconductor quantum wells; semiconductor technology; silicon; substrates; 12 V; 2 micron; 4.3 dB; 5 V; Au electrical contact; Au mirror; GaAs on Si; GaAs-AlGaAs-Au-Si; MQW reflection modulators; Si substrate; asymmetry Fabry-Perot reflection modulator; insertion loss; lifted-off films; multiple-quantum well-structure; normally off modulator; optical interconnect; perpendicular geometry; reflection modulator; semiconductors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910351

Filename

100833