Efficiency Enhancement of PtSi Detectors by Photonic Crystals

Author

Malekmohammad, Mohammad ; Asadi, Reza ; Zahedinejad, Mohammad ; Khaje, Mahdi ; Bagheri, Saeed ; Erfaniyan, Alireza ; Soltanolkotabi, Mahdi ; Naderi, Mohammad Hossein ; Raissi, Farshid

Author_Institution

Dept. of Phys., Univ. of Isfahan, Isfahan, Iran

Volume

14

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

4055

Lastpage

4058

Abstract

We present the first experimental study for enhancement of PtSi Schottky detectors using photonic crystal (PC) structures. PCs can be used for simultaneous reduction of reflection and increase of absorption. The 2-D PCs are fabricated by interference lithography and reactive ion etching. In PC with 4.2-μm depth, the average responsivity is enhanced by a factor of ~7 with respect to regular detectors. We show that the light absorption enhancement is not sufficient to explain efficiency enhancement. The extra enhancement may be due to nanoscale roughness on the PC walls that affect the carrier collection efficiency and cutoff wavelength.

Keywords

light absorption; light interference; light reflection; optical fabrication; optical sensors; photodetectors; photolithography; photonic crystals; platinum compounds; sputter etching; 2D PC structure; PtSi; Schottky detector; carrier collection efficiency; depth 4.2 mum; interference lithography; light absorption enhancement; nanoscale roughness; photonic crystal structure; reactive ion etching; Absorption; Detectors; Interference; Photonic crystals; Platinum alloys; Silicides; Silicon; Interference lithography; Photonic crystal; PtSi Schottky detectors; photodetectors;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2014.2330338

Filename

6847112