Correction to “Quantitative Analysis of the Effect of Hydrogen Diffusion From Silicon Oxide Etch-Stopper Layer Into Amorphous In–Ga–Zn–O on Thin-Film Transistor” [Nov 14 3762-3767]

Author

Toda, Takechi ; Wang, Dongping ; Jiang, Jianliang ; Hung, Mai Phi ; Furuta, Mamoru

Author_Institution

Volume

Issue

fYear

2015

fDate

Feb. 2015

Firstpage

689

Lastpage

689

Abstract

In the above paper [1], co-author D. Wang’s name was incorrectly spelled in both the biography and the byline. The correct spelling is Dapeng Wang.

Keywords

Annealing; Charge carrier density; Hydrogen; Silicon; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/TED.2014.2374978

Filename

6975093

Link To Document