DocumentCode :
760283
Title :
Independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser arrays
Author :
Lehmen, A. Von ; Chang-Hasnain, C. ; Wullert, J. ; Carrion, L. ; Stoffel, N. ; Florez, L. ; Harbison, J.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Volume :
27
Issue :
7
fYear :
1991
fDate :
3/28/1991 12:00:00 AM
Firstpage :
583
Lastpage :
585
Abstract :
The fabrication of an 8*8 independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser array based on planar ion-implantation processes is described. The uniformity of laser characteristics across the array under both pulsed and CW operation is discussed. Simultaneous addressing of multiple lasers is demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; ion implantation; semiconductor doping; semiconductor laser arrays; CW operation; InGaAs-GaAs; independently addressable laser arrays; laser characteristics; multiple lasers; planar ion-implantation processes; pulsed operation; simultaneous addressing; vertical-cavity surface-emitting laser array;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910368
Filename :
100850
Link To Document :
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