• DocumentCode
    760313
  • Title

    Small dimension Bragg reflectors formed by air-isolated GaAs layers

  • Author

    Hummel, S. ; Frateschi, Newton ; Dapkus, P.D.

  • Volume
    27
  • Issue
    7
  • fYear
    1991
  • fDate
    3/28/1991 12:00:00 AM
  • Firstpage
    588
  • Lastpage
    590
  • Abstract
    Demonstrates a process for the fabrication of air-isolated microstructures based upon impurity diffusion disordering and selective etching of multilayer structures. The process is illustrated by the fabrication of 5 and 22 mu m wide Bragg reflectors with reflectivities in excess of 95%.
  • Keywords
    III-V semiconductors; diffusion in solids; distributed Bragg reflector lasers; etching; gallium arsenide; semiconductor junction lasers; 22 micron; 5 micron; Bragg reflectors; air-isolated microstructures; impurity diffusion disordering; multilayer structures; reflectivities; selective etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910371
  • Filename
    100853