DocumentCode :
760315
Title :
Thermally stimulated currents in holmium oxide thin-film capacitors
Author :
Wiktorczyk, T.
Author_Institution :
Inst. of Phys., Tech. Wroclaw Univ., Poland
Volume :
27
Issue :
4
fYear :
1992
fDate :
8/1/1992 12:00:00 AM
Firstpage :
807
Lastpage :
812
Abstract :
Results of experimental analysis of vacuum-evaporated aluminum/holmium oxide/aluminum thin-film thermoelectrets by means of thermally stimulated currents are presented. All measurements were carried out in the temperature range 297 to 500 K, with an automated microcomputer-controlled system. The TSD and TSP current characteristics are presented for Al/Ho2O3/Al thin-film sandwiches with the insulator film thickness ranging from 52 to 370 nm. The TSD and TSP current plots obtained for different measurement conditions exhibit only a single peak in the temperature range 380 to 406 K. Trapping levels with activation energy of 0.5 to 0.7 eV are responsible for observed results
Keywords :
aluminium; computerised instrumentation; holmium compounds; thermally stimulated currents; thermoelectrets; thin film capacitors; vacuum deposited coatings; 0.5 to 0.7 eV; 297 to 500 K; 52 to 370 nm; Al-Ho2O3-Al; TSC; TSD; TSP current characteristics; activation energy; experimental analysis; insulator film thickness; microcomputer-controlled system; temperature range; thermally stimulated currents; thermally stimulated desorption; thin-film capacitors; thin-film thermoelectrets; Capacitors; Current measurement; Insulation; Optical films; Sputtering; Temperature distribution; Temperature measurement; Thermal conductivity; Transistors; Voltage;
fLanguage :
English
Journal_Title :
Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9367
Type :
jour
DOI :
10.1109/14.155802
Filename :
155802
Link To Document :
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