Title :
Dual-Direction Nanocrossbar Array ESD Protection Structures
Author :
Wang, Li ; Wang, Xin ; Shi, Zitao ; Ma, Rui ; Liu, Jian ; Dong, Zhongyu ; Zhang, Chen ; Lin, Lin ; Zhao, Hui ; Zhang, Lijie ; Wang, Albert ; Cheng, Yuhua ; Huang, Ru
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, Riverside, CA, USA
Abstract :
This letter reports a new nanocrossbar array ESD protection design. The unique nanocrossbar array structures ensure uniform ESD discharging and achieve fast ESD response speed and >; 8A ESD protection capability in prototypes. The nanoswitching ESD protection effect eliminates large leakage current inherent to traditional p-n-junction-type ESD protection devices.
Keywords :
electrostatic discharge; integrated circuit design; integrated circuit reliability; leakage currents; nanoelectronics; p-n junctions; electrostatic discharge; leakage current; nanocrossbar array structures; nanoswitching ESD protection effect; p-n-junction-type ESD protection devices; Arrays; Electrostatic discharges; Nanoscale devices; Prototypes; Switches; Transmission line measurements; Tunneling; ESD protection; nanocrossbar array;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2222337
