• DocumentCode
    76074
  • Title

    Dual-Direction Nanocrossbar Array ESD Protection Structures

  • Author

    Wang, Li ; Wang, Xin ; Shi, Zitao ; Ma, Rui ; Liu, Jian ; Dong, Zhongyu ; Zhang, Chen ; Lin, Lin ; Zhao, Hui ; Zhang, Lijie ; Wang, Albert ; Cheng, Yuhua ; Huang, Ru

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California, Riverside, Riverside, CA, USA
  • Volume
    34
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    111
  • Lastpage
    113
  • Abstract
    This letter reports a new nanocrossbar array ESD protection design. The unique nanocrossbar array structures ensure uniform ESD discharging and achieve fast ESD response speed and >; 8A ESD protection capability in prototypes. The nanoswitching ESD protection effect eliminates large leakage current inherent to traditional p-n-junction-type ESD protection devices.
  • Keywords
    electrostatic discharge; integrated circuit design; integrated circuit reliability; leakage currents; nanoelectronics; p-n junctions; electrostatic discharge; leakage current; nanocrossbar array structures; nanoswitching ESD protection effect; p-n-junction-type ESD protection devices; Arrays; Electrostatic discharges; Nanoscale devices; Prototypes; Switches; Transmission line measurements; Tunneling; ESD protection; nanocrossbar array;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2222337
  • Filename
    6361453