Genuine wide-bandgap microcrystalline emitter Si-HBT with enhanced current gain by suppressing homocrystallization

Author

Sasaki, Kimihiro ; Miyajima, Takeshi ; Kubota, Yuichi ; Furukawa, Seijiro

Author_Institution

Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan

Volume

39

Issue

9

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

2132

Lastpage

2138

Abstract

The energy bandgap of microcrystalline silicon (μc-Si) emitter prepared by the plasma CVD method for Si-HBTs was investigated. The μc-Si films directly deposited on c-Si substrates were confirmed to have almost the same energy bandgap as c-Si because of μc-Si crystallization, resulting in formation of a homojunction. In order to suppress such a homojunction formation, a c-Si surface modification method using an a-SiC thin layer was proposed. The a-SiC layer was confirmed to have the effect of producing an abrupt and uniform heterojunction. A current gain as high as 523 was obtained by using the a-SiC thin layer, which was 24 times larger than that without the a-SiC layer

Keywords

amorphous semiconductors; elemental semiconductors; energy gap; heterojunction bipolar transistors; plasma CVD; silicon; silicon compounds; Si-HBT; Si-SiC-Si; amorphous SiC layer; crystalline Si; current gain; energy bandgap; homocrystallization suppression; microcrystalline Si; plasma CVD; semiconductors; uniform heterojunction; wide-bandgap microcrystalline emitter; Carbon dioxide; Crystalline materials; Crystallization; Glass; Helium; Heterojunctions; Photonic band gap; Plasma temperature; Semiconductor films; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.155884

Filename

155884