Numerical large-signal simulation of the diffusion noise in GaAs Gunn devices

Author

Wang, Bing ; Curow, Matthias

Author_Institution

Arbeitsbereich Hochfrequenztech., Tech. Univ., Hamburg, Harburg, Germany

Volume

39

Issue

9

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

2176

Lastpage

2178

Abstract

The generation and distribution of the diffusion noise in short GaAs Gunn devices operating under large-signal conditions is simulated numerically by the use of the impedance field method combined with the full hydrodynamic transport model. The method and some results are briefly described. The main conclusions are that this method is, in general, well suited to study the noise behavior of Gunn devices under large-signal conditions, and that earlier estimation about the noise properties can be confirmed, even for short structures

Keywords

Gunn devices; III-V semiconductors; digital simulation; electron device noise; electronic engineering computing; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; GaAs Gunn devices; Gunn devices; diffusion noise; hydrodynamic transport model; impedance field method; large-signal conditions; large-signal simulation; noise behavior; noise properties; numerical simulation; semiconductors; short structures; Active noise reduction; Circuit noise; Electrons; Equations; Gallium arsenide; Gunn devices; Impedance; Numerical simulation; Semiconductor device noise; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.155890

Filename

155890