DocumentCode
761099
Title
1/f noise reduction in self-aligned AlGaAs/GaAs HBT with AlGaAs surface passivation layer
Author
Hayama, Nobuyuki ; Honjo, Kazuhiko
Author_Institution
NEC Corp., Ibaraki, Japan
Volume
39
Issue
9
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
2180
Lastpage
2182
Abstract
It is demonstrated that drastic improvement is achieved in base current noise for AlGaAs-passivated full self-aligned AlGaAs/GaAs HBTs, due to extrinsic base recombination current reduction. The base current 1/f noise was over 17 dB lower than that for an non-AlGaAs-passivated HBT, and comparable to that for an AlInAs/InGaAs HBT under a low collector density
Keywords
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; heterojunction bipolar transistors; passivation; solid-state microwave devices; 1/f noise reduction; AlGaAs surface passivation layer; AlGaAs-GaAs; base current noise; extrinsic base recombination current reduction; low noise transistors; semiconductors; Circuit noise; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Low-frequency noise; Noise reduction; Passivation; Phase noise; Radiative recombination; Semiconductor device noise;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.155895
Filename
155895
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