DocumentCode
761115
Title
DC characteristics of submicrometer CMOS inverters operating over the whole temperature range of 4.2-300 K
Author
Gutiérrez-D, Edmundo A. ; Deferm, Ludo ; Declerck, Gilbert
Author_Institution
IMEC, Leuven, Belgium
Volume
39
Issue
9
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
2182
Lastpage
2184
Abstract
The temperature dependence of the MOSFET parameters as well as the freeze-out and carrier multiplication effects on the DC characteristics of submicrometer CMOS inverters, operated over the whole ambient temperature range of 4.2-300 K, are discussed. The observed degradation of the inverter performance below 50 K is attributed to freeze-out and carrier multiplication effects
Keywords
CMOS integrated circuits; logic gates; 4.2 to 300 K; DC characteristics; MOSFET parameters; carrier freeze out; carrier multiplication effects; freeze-out; performance degradation; submicrometer CMOS inverters; submicron CMOS; temperature dependence; temperature range; CMOS technology; Degradation; Inverters; MOS devices; MOSFET circuits; Switching circuits; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.155896
Filename
155896
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