Influence of phase-breaking processes on shot noise in resonant tunneling devices

Author

Alam, Muhammad A. ; Khondker, Abul N.

Author_Institution

Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA

Volume

39

Issue

9

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

2184

Lastpage

2186

Abstract

J. Han and F.S. Barnes (1991) have shown that shot noise power associated with the current in double-barrier resonant tunneling structures is significantly reduced due to reductions in velocity fluctuations. The model is based on the transit time of coherent electrons across the device structure. It is shown that in the presence of phase-breaking processes the shot noise cutoff frequency is higher than that predicted by Han and Barnes. This is because an increased phase-breaking collision rate tends to broaden the effective velocity distribution for the transmitted electrons

Keywords

Monte Carlo methods; electron device noise; resonant tunnelling devices; semiconductor device models; double-barrier resonant tunneling structures; model; phase-breaking collision rate; phase-breaking processes; reductions in velocity fluctuations; resonant tunneling devices; shot noise; shot noise cutoff frequency; transit time of coherent electrons; transmitted electrons; velocity distribution broadening; Cutoff frequency; Electrons; Fluctuations; Interference; Noise reduction; Optical scattering; Particle scattering; Phase noise; Resonant tunneling devices; Space charge;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.155897

Filename

155897