A two-step implanted base (TSIB) process for high-performance bipolar transistor

Author

Tsang, Yuk L. ; Scaduto, Anthony F.

Author_Institution

IBM, Hopewell Junction, NY, USA

Volume

39

Issue

9

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

2127

Lastpage

2131

Abstract

The fabrication process, device profiles, and electrical characteristics of an advanced bipolar transistor with a two-step ion-implanted base (TSIB) are described. This base implant scheme has achieved a significant collector-emitter leakage yield improvement over the conventional transistor (control) which does not receive the TSIB implant. The TSIB base profile can be kept almost identical to that of the control transistors by using the selective implanted collector process. The maximum cutoff frequency of 20 GHz is measured

Keywords

bipolar transistors; ion implantation; solid-state microwave devices; 20 GHz; TSIB; base profile; bipolar transistor; collector-emitter leakage; device profiles; electrical characteristics; fabrication process; implant scheme; maximum cutoff frequency; two-step implanted base; two-step ion-implanted base; yield improvement; Auditory implants; Bipolar transistors; Boron; Cutoff frequency; Electric variables; Fabrication; Frequency measurement; Isolation technology; Pollution measurement; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.155904

Filename

155904