• DocumentCode
    761190
  • Title

    A simple analytical model of the tunnel MIS emitter Auger transistor

  • Author

    Vexler, Mikhail I.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    42
  • Issue
    4
  • fYear
    1995
  • fDate
    4/1/1995 12:00:00 AM
  • Firstpage
    656
  • Lastpage
    661
  • Abstract
    A simple analytical model of the tunnel MIS emitter transistor is developed, taking into account the Auger ionization effect. The proposed model predicts the features of DC performance of this device arising from Auger ionization. This model was then used to compute typical characteristics for an Al/SiO2/n-Si Auger transistor. Generated DC characteristics are in satisfactory agreement with recently published experimental results
  • Keywords
    Auger effect; MIS devices; bipolar transistors; impact ionisation; semiconductor device models; tunnel transistors; Al-SiO2-Si; Auger ionization effect; DC characteristics; DC performance; analytical model; tunnel MIS emitter Auger transistor; Analytical models; Character generation; DC generators; Electrons; Impact ionization; Insulation; Metal-insulator structures; Predictive models; Space charge; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.376220
  • Filename
    376220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=761190