A comparison of the optical projection lithography simulators in SAMPLE and PROLITH

Author

Crisalle, Oscar D. ; Keifling, Steven R. ; Seborg, Dale E. ; Mellichamp, Duncan A.

Author_Institution

Dept. of Chem. & Nucl. Eng., California Univ., Santa Barbara, CA, USA

Volume

5

Issue

1

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

14

Lastpage

26

Abstract

This paper documents important algorithmic details not available in the open literature, and illustrates differences and similarities between the SAMPLE and PROLITH programs using representative lithography systems as examples. Numerical comparisons demonstrate that the aerial images calculated by SAMPLE and PROLITH are in generally good agreement. At high numerical resolution, the programs provide the same qualitative lithographic information, including latent images and edge profile results; however, significant degradation occurs at lower restorations. Adequate results are obtained using a vertical resolution smaller than one-twentieth of the theoretical standing-wave wavelength. Significant disagreement is found in the output of the post-exposure bake algorithms where SAMPLE predicts much lower standing-wave amplitude attenuation effects

Keywords

electronic engineering computing; integrated circuit manufacture; optical images; photolithography; IC manufacture; PROLITH; SAMPLE; aerial images; critical dimensions; edge profile; high numerical resolution; image quality degradation; latent images; linewidth; optical projection lithography simulators; post-exposure bake algorithms; resist profiles; sidewall angle; standing-wave amplitude attenuation effects; standing-wave wavelength; vertical resolution; Chemical engineering; Computer aided manufacturing; Etching; Image resolution; Lithography; Mathematical model; Optical attenuators; Optical films; Printing; Resists;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.121972

Filename

121972