DocumentCode
76160
Title
A Parametric Study of InGaN/GaN Nanorod Core-Shell LEDs
Author
Der Maur, Matthias Auf ; Sacconi, Fabio ; Carlo, Aldo Di
Author_Institution
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
Volume
60
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
171
Lastpage
177
Abstract
In this paper, we present simulation results on the optical and transport properties of InGaN/GaN core-shell nanorod light-emitting diodes. The influence of contact position, surface recombination, and doping configuration on internal quantum efficiency is examined. The qualitative behavior when adding an electron blocking layer and the dependence on In content have been studied.
Keywords
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; nanorods; semiconductor doping; InGaN-GaN; contact position; doping configuration; electron blocking layer; internal quantum efficiency; light-emitting diodes; nanorod core-shell LED; parametric study; qualitative behavior; surface recombination; Analytical models; Anodes; Gallium nitride; Light emitting diodes; Radiative recombination; Strain; Core shell; light-emitting diode (LED); nanorod; nitrides; simulation;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2012.2226037
Filename
6361461
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