• DocumentCode
    761872
  • Title

    X-band GaAs MESFET oscillator for cryogenic application at 4.2 K

  • Author

    Vollmer, E. ; Gutmann, P.

  • Author_Institution
    Physikalisch-Tech. Bundesanstalt, Braunschweig, Germany
  • Volume
    27
  • Issue
    24
  • fYear
    1991
  • Firstpage
    2210
  • Lastpage
    2211
  • Abstract
    A stripline X-band oscillator for use in a Josephson potentiometer has been designed and constructed. An oscillator comprising a packaged GaAs MESFET was successfully tested at temperatures of 300 and 4.2 K. The cooling improves the short term stability of the frequency during a period of several minutes by a factor of 10 to 10-6.
  • Keywords
    III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; frequency stability; gallium arsenide; microwave oscillators; strip line components; 300 K; 4.2 K; GaAs; GaAs MESFET oscillator; Josephson potentiometer; SHF; cryogenic application; frequency stability; packaged GaAs MESFET; semiconductors; short term stability; stripline X-band oscillator; superconducting MMIC; temperatures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911367
  • Filename
    109491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=761872