Wideband Active Inductor and Negative Capacitance for Broadband RF and Microwave Applications

This paper presents new structures of the active inductor and negative capacitance (NCAP) that exhibit linear impedance/admittance characteristics in a broad frequency band. To generate a frequency-independent wideband active inductor (WAI), we exploit an NCAP that reduces the effect of the shunt parasitic capacitance of the circuit. In addition, an NCAP is added to NCAP´s circuit that compensates for the effects of the series parasitics and provides a wideband characteristic for the NCAP. Fabricated in 0.13-μm CMOS technology, the proposed WAI and wideband negative capacitance (WNC) exhibit frequency independent bandwidths of 7.8 and 5.2 GHz, respectively. The details for the design of a Ultra Wideband (UWB) distributed amplifier using WNC cells and a UWB phase shifter with WAI cells are also presented.