Title :
High Q inductors for wireless applications in a complementary silicon bipolar process
Author :
Ashby, Kirk B. ; Koullias, Ico A. ; Finley, William C. ; Bastek, John J. ; Moinian, Shahriar
Author_Institution :
AT&T Bell Labs., Reading, PA, USA
fDate :
1/1/1996 12:00:00 AM
Abstract :
Rectangular spiral inductors with Q´s over 12 have been built in a high-speed complementary bipolar process and characterized for use in wireless applications. An accurate broadband model for the inductors has been developed, and a test filter and mixer have been built to verify the performance of the inductors and the accuracy of the model
Keywords :
Q-factor; bipolar analogue integrated circuits; elemental semiconductors; inductors; silicon; Si; broadband model; high Q inductors; high-speed complementary bipolar process; mixer; rectangular spiral inductors; test filter; wireless applications; Circuit testing; Filters; Frequency; Inductors; Integrated circuit measurements; Kirk field collapse effect; Metallization; Q measurement; Silicon; Spirals;
Journal_Title :
Solid-State Circuits, IEEE Journal of
