Behavioral Approach to SiC MPS Diode Electrothermal Model Generation

Author

Starzak, L. ; Zubert, Mariusz ; Janicki, Marcin ; Torzewicz, T. ; Napieralska, M. ; Jablonski, Grzegorz ; Napieralski, A.

Author_Institution

Dept. of Microelectron. & Comput. Sci., Tech. Univ. of Lodz, Lodz, Poland

Volume

60

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

630

Lastpage

638

Abstract

A comprehensive approach to generation of electrothermal models of silicon carbide (SiC) power Schottky diodes is presented. Both the electrical and thermal parts of the model are behavioral. The electrical one was developed in order to accurately represent the nonlinear properties of SiC merged PiN Schottky (MPS) diodes. Its parameters are automatically obtained with a dedicated numerical procedure. The thermal model derivation differs from the earlier approaches because it is based on the analysis of thermal constant spectrum of the temperature response of a modeled device. Simple model generation and parameter extraction procedures are proposed in which no knowledge of technological data is necessary.

Keywords

Schottky diodes; p-i-n diodes; power semiconductor diodes; semiconductor device models; silicon compounds; thermal analysis; wide band gap semiconductors; MPS diode electrothermal model generation; PiN Schottky diodes; SiC; behavioral approach; nonlinear property; parameter extraction procedures; silicon carbide power Schottky diodes; temperature response; thermal constant spectrum analysis; thermal model; Mathematical model; Numerical models; Schottky diodes; Semiconductor device modeling; Silicon carbide; Temperature measurement; Compact thermal models (CTMs); Schottky diodes; electrothermal models; power semiconductor devices; silicon carbide;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2222887

Filename

6361471