Title :
High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- μm BiCMOS Process for RF-Power Applications
Author :
Muller, D. ; Giry, A. ; Judong, F. ; Rossato, C. ; Blanchet, F. ; Szelag, B. ; Aguirre, A. Monroy ; Sommet, R. ; Pache, D. ; Noblanc, O.
Author_Institution :
STMicroelectron., Crolles
fDate :
4/1/2007 12:00:00 AM
Abstract :
The optimization of the small and large signal performances of a radio frequency (RF)-LDMOS is presented via the achievement of a novel LDMOS architecture. Specific process steps are introduced into a 0.25-mum BiCMOS technology and precisely described to realize a fully salicided gate RF-LDMOS architecture. Significant improvement is obtained on the small-signal - fT and Fmax - and power performances while maintaining good dc characteristics
Keywords :
BiCMOS integrated circuits; MOSFET; power amplifiers; radiofrequency amplifiers; 0.25 micron; 15 V; BiCMOS integrated circuits; BiCMOS process; LDMOS transistor architecture; MOSFET power amplifier; RF-power applications; fully salicided gate; radio frequency-LDMOS; semiconductor device fabrication; semiconductor device measurements; BiCMOS integrated circuits; Fabrication; Feedback; MOSFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency identification; Semiconductor optical amplifiers; Signal processing; BiCMOS integrated circuits; MOSFET power amplifier; power amplifier; semiconductor device fabrication; semiconductor device measurements;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.892355
