Design considerations of IGBT´s in resonant converter applications

Author

Li, Hsin-Hua ; Kutkut, Nasser H. ; Divan, Deepakraj ; Shenai, Krishna

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Volume

31

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

97

Lastpage

105

Abstract

The switching dynamics of insulated gate bipolar transistors (IGBT´s) in zero voltage switching (ZVS) resonant converter applications is studied and optimized using an advanced mixed device and circuit simulator. It is shown that bipolar and MOS device parameters must be carefully optimized to obtain the lowest total power loss. A simple circuit simulation model was used in an advanced behavioral circuit simulator where the model parameters were extracted from mixed device and circuit simulations. Performance analysis of a typical series resonant converter (SRC) shows that ZVS condition is more favorable than the zero current switching (ZCS) condition from the standpoint of obtaining efficient power conversion. It is shown that IGBT´s with narrower source result in lower total switching power loss

Keywords

bipolar transistor switches; circuit analysis computing; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; resonant power convertors; semiconductor device models; IGBT; MOS parameters; behavioral circuit simulator; bipolar parameters; design; device simulator; insulated gate bipolar transistor; mixed-mode simulator; optimization; power conversion efficiency; power loss; series resonant converter; switching dynamics; zero voltage switching; Circuit simulation; Insulated gate bipolar transistors; MOS devices; Performance analysis; RLC circuits; Resonance; Switching circuits; Switching converters; Zero current switching; Zero voltage switching;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.485871

Filename

485871