Thermal Maps of GaAs P-HEMT: A Novel System Based on the Photocurrent Spectral Analysis

Author

Reale, Andrea ; Carlo, Aldo Di ; Peroni, Marco ; Lanzieri, Claudio ; Lavagna, S.

Author_Institution

Dept. of Electron. Eng., Rome Tor Vergata Univ.

Volume

54

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

879

Lastpage

882

Abstract

In this brief, we present a novel noninvasive method for spatially resolved thermal measurement of HEMT devices based on microphotoconductance analysis. This approach is used to obtain the temperature distribution in the active regions of a GaAs P-HEMT. Through 1D and 2D thermal maps, we are able to measure the temperature inside each single channel, and owing to the improved spatial resolution of the developed technique, it is possible to observe the hottest region of the device which is placed at the drain side of the gate. Moreover, the resolution of the temperature measurements allows defining a local thermal resistance which is not uniform over the device due to the mutual heating between the channels

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; photoconductivity; semiconductor device measurement; spectral analysis; temperature distribution; thermal resistance; 1D thermal maps; 2D thermal maps; GaAs; P-HEMT; device heating; microphotoconductance analysis; photocurrent spectral analysis; spatial resolution; temperature distribution; temperature measurement; thermal measurement; thermal resistance; Gallium arsenide; HEMTs; Optical fiber devices; Photoconductivity; Spatial resolution; Spectral analysis; Spectroscopy; Temperature distribution; Temperature measurement; Thermal resistance; Device heating; P-HEMT; spatially resolved photoconductance; thermal resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.891868

Filename

4142901