Base Charge Dynamics of Abrupt Base–Emitter Junction HBTs and Its Representation in Transistor Models

Author

Sheinman, B. ; Ritter, D.

Author_Institution

IBM Haifa Res. Lab., Haifa Univ. Campus

Volume

54

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

632

Lastpage

636

Abstract

Base charge dynamics in abrupt heterojunction bipolar transistors (HBTs) are determined by the thermionic/field emission boundary condition. As a result, their small and large signal models differ from those of bipolar junction transistors (BJTs), which obey the Shockley boundary condition. There is comparison of the base charge dynamics in the abrupt HBT to the BJT case and derive the small and large signal models of the abrupt HBT

Keywords

heterojunction bipolar transistors; semiconductor device models; semiconductor heterojunctions; thermionic emission; Shockley boundary condition; base charge dynamics; base-emitter junction; field emission boundary condition; heterojunction bipolar transistors; semiconductor device modeling; semiconductor heterojunctions; thermionic emission; transistor models; Boundary conditions; Capacitance; Charge carrier processes; Equations; Frequency domain analysis; Helium; Heterojunction bipolar transistors; Semiconductor device modeling; Thermionic emission; Voltage; Bipolar transistors; heterojunction bipolar transistors; s emiconductor device modeling; semiconductor heterojunctions; thermionic emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.892363

Filename

4142905