Title :
Analysis of Geometry-Dependent Parasitics in Multifin Double-Gate FinFETs
Author :
Wu, Wen ; Chan, Mansun
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
fDate :
4/1/2007 12:00:00 AM
Abstract :
This paper analyzes the geometry-dependent parasitic components in multifin double-gate fin field-effect transistors (FinFETs). Parasitic fringing capacitance and overlap capacitance are physically modeled as functions of gate geometry parameters using a conformal mapping method. Also, a physical gate resistance model is presented, combined with parasitic capacitive couplings between source/drain fins and gates. The effects of geometrical parameters on FinFET design under different device configurations are thoroughly studied
Keywords :
MOSFET; capacitance; conformal mapping; coupled circuits; semiconductor device models; FinFET; conformal mapping; gate geometry parameters; gate resistance; geometry-dependent parasitics; maximum oscillation frequency; multifin double-gate fin field-effect transistors; parasitic capacitive couplings; parasitic fringing capacitance; resistance-capacitance delay; source/drain fins; source/drain gates; Double-gate FETs; FinFETs; Geometry; MOS devices; MOSFETs; Parasitic capacitance; Radio frequency; Roentgenium; Silicon on insulator technology; Solid modeling; Cutoff frequency; double gate (DG); fin field-effect transistor (FinFET); gate resistance; maximum oscillation frequency; radio frequency (RF); resistance–capacitance $ (RC)$ delay;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.891252
