Title :
Novel densely packed laser diode array
Author :
Harding, C.M. ; Waters, R.G.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Opto-Electron. Centre, Elmsford, NY, USA
Abstract :
A new GaAs/AlGaAs linear diode laser array with a packing density approaching 90% has been fabricated using chemically assisted ion beam etching. Results are presented for arrays which exhibit single-ended optically coated external quantum efficiencies of 71% and a maximum output power of 23 W (quasi-CW) from a 1 mm aperture.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor laser arrays; sputter etching; 1 mm; 23 W; 71 percent; CAIBE; GaAs-AlGaAs; chemically assisted ion beam etching; densely packed laser diode array; external quantum efficiencies; fabrication; high power laser arrays; linear diode laser array; maximum output power; packing density; semiconductors; single-ended optically coated;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911381
