• DocumentCode
    76342
  • Title

    Room Temperature Electrostatic Across the Interface in Nanostructured ZnO/La _{0.7} Sr _{0.3} MnO

  • Author

    Khachar, Uma ; Solanki, P.S. ; Kansara, Sanjay B. ; Choudhary, R.J. ; Phase, D.M. ; Kuberkar, D.G. ; Shah, N.A.

  • Author_Institution
    Dept. of Phys., Saurashtra Univ., Rajkot, India
  • Volume
    12
  • Issue
    6
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    915
  • Lastpage
    918
  • Abstract
    PLD grown ZnO/La0.7Sr0.3MnO3/SrTi0.998Nb0.002O3 nanostructured heterostructure has been studied for its nanoelectronic properties at room temperature under zero applied field. XRD φ-scan reveals the epitaxial growth of La0.7Sr0.3MnO3 (LSMO) film, while the transport of 10-nm LSMO manganite layer can be tuned with applied electric field using various field effect configurations. 10-nm LSMO layer shows a large change in resistance with the application of voltage, i.e., exhibiting colossal electroresistance (CER) ~100% (negative) and large positive electroresistance (ER) ~2683% under 4.5 V at room temperature. The variation scenario in 10-nm LSMO transport has been discussed on the basis of electric-field-induced modifications in the charge carrier density and electronic states.
  • Keywords
    II-VI semiconductors; X-ray diffraction; carrier density; lanthanum compounds; nanofabrication; nanostructured materials; pulsed laser deposition; semiconductor heterojunctions; strontium compounds; wide band gap semiconductors; zinc compounds; PLD grown nanostructured heterostructure; XRD φ-scan; ZnO-La0.7Sr0.3MnO3-SrTi0.998Nb0.002O3; applied electric field; charge carrier density; colossal electroresistance; electric-field-induced modifications; electronic states; electrostatic; field effect configurations; film epitaxial growth; manganite layer transport; nanoelectronic properties; positive electroresistance; size 10 nm; temperature 293 K to 298 K; voltage 4.5 V; voltage application; Educational institutions; Electric fields; Erbium; Field effect transistors; Physics; Resistance; Zinc oxide; Heterojunctions; nanoscale devices; semicon-ductor–metal interfaces;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2013.2277548
  • Filename
    6576250