• DocumentCode
    76386
  • Title

    A Simple and Accurate Pad-Thru-Short Deembedding Method Based on Systematic Analysis for RF Device Characterization

  • Author

    Chie-In Lee ; Wei-Cheng Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
  • Volume
    62
  • Issue
    1
  • fYear
    2015
  • fDate
    Jan. 2015
  • Firstpage
    94
  • Lastpage
    101
  • Abstract
    In this paper, a practical scalable cascade-based pad-thru-short deembedding methodology with the characteristic of wave propagation considered is presented for RF device characterization for the first time. Through an analysis, it is found that nonshielding thru and leg lines operate in quasi-transverse electromagnetic and quasi-transverse magnetic modes of wave propagation, respectively. To subtract the leg effect in different lengths based on transmission line parameters without shielding, this difference in operating modes between the thru and leg is addressed in this new method. Compared with a conventional scalable method with shielding, the presented method without violating the process design rules can achieve comparable results. Deembedding accuracy can be maintained without using numerous dummies. Therefore, this scalable deembedding method with simpler layout design and fabrication process is more practical for automatic ON-wafer measurements of different sized devices.
  • Keywords
    CMOS integrated circuits; integrated circuit design; integrated circuit interconnections; integrated circuit testing; radiofrequency integrated circuits; CMOS; RF device characterization; automatic on-wafer measurements; cascade-based pad-thru-short deembedding methodology; fabrication process; layout design; process design rules; quasitransverse electromagnetic modes; transmission line parameters; wave propagation; Couplings; Impedance; Integrated circuit interconnections; Metals; Propagation; Scattering parameters; Systematics; Deembedding; MOSFETs; scalable; transverse electromagnetic (TEM); transverse magnetic (TM); transverse magnetic (TM).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2373033
  • Filename
    6975128