• DocumentCode
    764197
  • Title

    Sub-threshold R-MOSFET tunable resistor technique

  • Author

    Worapishet, A. ; Khumsat, P.

  • Author_Institution
    Mahanakorn Microelectron. Res. Center, Mahanakorn Univ. of Technol., Nong-Chok Bangkok
  • Volume
    43
  • Issue
    7
  • fYear
    2007
  • Firstpage
    390
  • Lastpage
    392
  • Abstract
    An R-MOSFET resistor structure that enables extension of the MOSFETs´ operation into sub-threshold region while preserving good linearity performance is presented. The technique essentially relies upon a linear current division between two nonlinear branches each comprising a linear resistor and a MOSFET operating at sub-threshold inversion. The feasibility of the sub-threshold R-MOSFET structure is demonstrated via breadboard experiment using array transistors, and via simulation using a 0.18 mum CMOS process
  • Keywords
    CMOS analogue integrated circuits; MOSFET; resistors; 0.18 micron; CMOS process; array transistors; breadboard experiment; linear current division; sub-threshold R-MOSFET tunable resistor technique; sub-threshold inversion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070175
  • Filename
    4145292
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=764197