• DocumentCode
    764508
  • Title

    High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs

  • Author

    Kuo, H.C. ; Chang, Y.S. ; Lai, F.Y. ; Hsueh, T.H. ; Laih, L.H. ; Wang, S.C.

  • Author_Institution
    Inst. of Electro-optical Eng., Nat. Chiao-Tung Univ., Taiwan, Taiwan
  • Volume
    39
  • Issue
    14
  • fYear
    2003
  • fDate
    7/10/2003 12:00:00 AM
  • Firstpage
    1051
  • Lastpage
    1053
  • Abstract
    High performance 850 nm InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85°C.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical modulation; surface emitting lasers; 12.5 Gbit/s; 25 to 85 degC; 850 nm; InGaAsP-InGaP; InGaAsP/InGaP; high-speed modulation; modulation bandwidths; output characteristics; strain-compensated VCSELs; vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030672
  • Filename
    1220810
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=764508