Ferromagnetic Relaxation in Spin Valves With Picoscale Antiferromagnetic Layers

Author

Moyerman, S.M. ; Gannett, W. ; Borchers, J.A. ; Doucet, M. ; Carey, M.J. ; Sparks, P.D. ; Eckert, J.C.

Author_Institution

Phys. Dept., Harvey Mudd Coll., Claremont, CA

Volume

42

Issue

10

fYear

2006

Firstpage

2630

Lastpage

2632

Abstract

We have investigated the mechanism of weak exchange bias for a spin valve with threshold layer antiferromagnetic (AFM) thickness using giant magnetoresistance (GMR) and polarized neutron reflectometry (PNR). Results show that the sample exhibits instantaneous switching of the free layer followed by a gradual reorientation of the magnetization in the pinned ferromagnetic layer via domain wall formation. During subsequent field cycles, we found that relaxation in the pinned ferromagnetic (FM) layer is induced not only by an increasing field, but also in a static field over a relatively long time scale

Keywords

antiferromagnetic materials; ferromagnetic relaxation; giant magnetoresistance; spin valves; ferromagnetic relaxation; giant magnetoresistance; picoscale antiferromagnetic layers; pinned ferromagnetic layer; polarized neutron reflectometry; spin valves; threshold layer antiferromagnetic; weak exchange bias; Antiferromagnetic materials; Giant magnetoresistance; Hysteresis; Iron; Magnetization; NIST; Neutrons; Polarization; Reflectometry; Spin valves; Antiferromagnetic (AFM) materials; giant magnetoresistance (GMR); interface magnetism;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.879731

Filename

1704387